Amorphous bilayer TiO₂-InGaZnO thin film transistors with low drive voltageHSU, Hsiao-Hsuan; CHENG, Chun-Hu; PING CHIOU et al.Solid-state electronics. 2014, Vol 99, pp 51-54, issn 0038-1101, 4 p.Article

Analytical model for the threshold voltage of III-V nanowire transistors including quantum effectsMARIN, E. G; RUIZ, F. G; TIENDA-LUNA, I. M et al.Solid-state electronics. 2014, Vol 92, pp 28-34, issn 0038-1101, 7 p.Article

Application, modeling and limitations of Y-function based methods for massive series resistance in nanoscale SOI MOSFETsKARSENTY, A; CHELLY, A.Solid-state electronics. 2014, Vol 92, pp 12-19, issn 0038-1101, 8 p.Article

Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiersGELCZUK, Ł; DABROWSKA-SZATA, M; SOCHACKI, M et al.Solid-state electronics. 2014, Vol 94, pp 56-60, issn 0038-1101, 5 p.Article

Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistanceKARSENTY, A; CHELLY, A.Solid-state electronics. 2014, Vol 91, pp 28-35, issn 0038-1101, 8 p.Article

Complex-coupled edge-emitting photonic crystal distributed feedback quantum cascade lasers at λ ~ 7.6 μmJINCHUAN ZHANG; YINHUI LIU; ZHIWEI JIA et al.Solid-state electronics. 2014, Vol 94, pp 20-22, issn 0038-1101, 3 p.Article

Effect of In addition and annealing temperature on the device performance of solution-processed In-Zn-Sn-O thin film transistorsMYUNG HAN KIM; HO SEONG LEE.Solid-state electronics. 2014, Vol 96, pp 14-18, issn 0038-1101, 5 p.Article

Effect of load current density during the production of Cu₂O/Cu solar cells by anodic oxidation on film quality and output powerHASUDA, K; TAKAKUWA, O; SOYAMA, H et al.Solid-state electronics. 2014, Vol 91, pp 130-136, issn 0038-1101, 7 p.Article

Electrical characteristics of Al₂O₃/TiO₂/Al₂O₃ prepared by atomic layer deposition on (NH₄)₂S-treated GaAsYEN, Chih-Feng; LEE, Ming-Kwei; LEE, Jung-Chan et al.Solid-state electronics. 2014, Vol 92, pp 1-4, issn 0038-1101, 4 p.Article

Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with f_max surpassing 408 GHzMING LI; CHAK WAH TANG; HAIOU LI et al.Solid-state electronics. 2014, Vol 99, pp 7-10, issn 0038-1101, 4 p.Article

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applicationsPYUNG MOON; JUN YEONG LIM; YOUN, Tae-Un et al.Solid-state electronics. 2014, Vol 94, pp 51-55, issn 0038-1101, 5 p.Article

Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTsXINGYE ZHOU; ZHIHONG FENG; LI WANG et al.Solid-state electronics. 2014, Vol 100, pp 15-19, issn 0038-1101, 5 p.Article

Improved retention times in UTBOX nMOSFETs for 1T-DRAM applicationsSASAKI, K. R. A; NICOLETTI, T; ALMEIDA, L. M et al.Solid-state electronics. 2014, Vol 97, pp 30-37, issn 0038-1101, 8 p.Article

Incremental resistance programming of programmable metallization cells for use as electronic synapsesMAHALANABIS, D; BARNABY, H. J; GONZALEZ-VELO, Y et al.Solid-state electronics. 2014, Vol 100, pp 39-44, issn 0038-1101, 6 p.Article

Investigation on the electrical properties of superlattice FETs using a non-parabolic band modelMAIORANO, P; GNANI, E; GRASSI, R et al.Solid-state electronics. 2014, Vol 98, pp 45-49, issn 0038-1101, 5 p.Article

Low temperature acetone detection by p-type nano-titania thin film: Equivalent circuit model and sensing mechanismBHOWMIK, B; DUTTA, K; HAZRA, A et al.Solid-state electronics. 2014, Vol 99, pp 84-92, issn 0038-1101, 9 p.Article

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensorsPITTINO, F; PALESTRI, P; SCARBOLO, P et al.Solid-state electronics. 2014, Vol 98, pp 63-69, issn 0038-1101, 7 p.Article

Planar GaAs nanowire tri-gate MOSFETs by vapor―liquid―solid growthCHEN ZHANG; XIULING LI.Solid-state electronics. 2014, Vol 93, pp 40-42, issn 0038-1101, 3 p.Article

P―N junction and metal contact reliability of SiC diode in high temperature (873 K) environmentCHAND, R; ESASHI, M; TANAKA, S et al.Solid-state electronics. 2014, Vol 94, pp 82-85, issn 0038-1101, 4 p.Article

Resistive switching in lateral junctions with nanometer separated electrodesZIEGLER, Martin; HARNACK, Oliver; KOHLSTEDT, Hermann et al.Solid-state electronics. 2014, Vol 92, pp 24-27, issn 0038-1101, 4 p.Article

Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10 nm nodeMORVAN, S; ANDRIEU, F; BARBE, J.-C et al.Solid-state electronics. 2014, Vol 98, pp 50-54, issn 0038-1101, 5 p.Article

Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizationsGLOWACKI, F; LE ROYER, C; GOURHANT, O et al.Solid-state electronics. 2014, Vol 97, pp 82-87, issn 0038-1101, 6 p.Article

ZnO based UV detectors with Surface Plasmon Polariton enhancement on responsivityGAOMING LI; JIDONG SONG; JINGWEN ZHANG et al.Solid-state electronics. 2014, Vol 92, pp 47-51, issn 0038-1101, 5 p.Article

Research on efficiency droop mechanism and improvement in AlGaInP Ultra-High-Brightness LEDs using the transient measurement methodHUANG, Chien-Fu; SU, Yen-Fu; LIN, Ching-Bei et al.Solid-state electronics. 2014, Vol 93, pp 15-20, issn 0038-1101, 6 p.Article

Amorphous IGZO TFTs and circuits on conformable aluminum substratesMAHMOUDABADI, Forough; XIAOXIAO MA; HATALIS, Miltiadis K et al.Solid-state electronics. 2014, Vol 101, pp 57-62, issn 0038-1101, 6 p.Conference Paper